AO7407 20v p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -1.2a r ds(on) (at v gs =-4.5v) < 135m w r ds(on) (at v gs =-2.5v) < 170m w r ds(on) (at v gs =-1.8v) < 220m w symbol the AO7407 uses advanced trench technology to provi de excellent r d s(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitab le for use as a load switch or in pwm applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v g d s d g s d s g sc-70 (sot-323) top view bottom view symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 0.4 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w parameter typ max c/w r q ja 160 180 200 v 8 gate-source voltage drain-source voltage -20 v maximum units parameter a i d -1.2 -1 -10 t a =25c t a =70c pulsed drain current c continuous drain current 0.63 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 130 220 160 maximum junction-to-ambient a units g d s d g s d s g sc-70 (sot-323) top view bottom view rev 4: june 2010 www.aosmd.com page 1 of 5
AO7407 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.4 -0.65 -1 v i d(on) -10 a 65 135 t j =125c 90 175 80 170 m w 100 220 m w g fs 10 s v sd -0.7 -1 v i s -1 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23.0 w q g 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t 36 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-10v, r = 8.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-10v, i d =-1.2a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current m w on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-1.2a forward transconductance diode forward voltage i s =-1a,v gs =0v v ds =-5v, i d =-1.2a v gs =-1.8v, i d =-1a v gs =-2.5v, i d =-1a reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-1.2a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =8.3 w , r gen =3 w turn-off fall time i f =-1.2a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25
AO7407 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 60 70 80 90 100 110 120 130 140 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-1.0a v gs =-2.5v i d =-1a v gs =-4.5v i d =-1.2a 25
AO7407 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-1.2a 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25
AO7407 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 4: june 2010 www.aosmd.com page 5 of 5
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